Regularly patterned nanorod light-emitting diode arrays
نویسندگان
چکیده
Regularly patterned InGaN/GaN quantum-well nanorod (NR) light-emitting diode (LED) arrays are grown with MOCVD and characterized with cathodoluminescence and transmission electron microscopy. The dependencies of their morphologies and emission behaviors on the geometry of growth pattern and MOCVD growth condition are investigated. Also, a light-emitting device consisting of such an NR LED array is implemented.
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